Manufacturing method of package substrate

ABSTRACT

A package substrate for carrying a chip with a plurality of bumps thereon is provided. The package substrate includes a first substrate, and an interposer. The first substrate has a first circuit layer disposed on a surface thereof. The interposer includes a second substrate and a second circuit layer formed thereon. The second circuit layer comprises a plurality of bonding pads and traces. The traces are electrically connected to the corresponding bonding pads. Furthermore, the bonding pads are used for being connected to the bumps. The second circuit layer of the interposer is physically and electrically connected to the first circuit layer of the first substrate, and the second substrate and the first substrate are made of different materials.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of an application Ser. No. 11/163,276,filed on Oct. 12, 2005, issued as U.S. Pat. No. 7,327,018, which claimsthe priority benefit of Taiwan application Ser. No. 93130958, filed onOct. 13, 2004. The entirety of each of the above-mentioned patentapplications is incorporated by reference herein and made a part of thisspecification.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a substrate and manufacturing methodthereof. More particularly, the present invention relates to a flip chippackage substrate and manufacturing method thereof.

2. Description of the Related Art

In the packaging process of integrated circuits (IC), the first levelpackaging mainly involves attaching chips onto carriers. The packagingformats include wire bonding (WB), tape automatic bonding (TAB) and flipchip (FC). Regardless of TAB or FC formats, in the process of attachingthe chip onto the package substrate, bumps are fabricated on the bondingpads of a wafer so that the bumps can subsequently serve as anelectrical connection between the chip and package substrate.

With the maturity of the fabricating technology of semiconductordevices, the pitch between the bumps on a chip has been shrinking.However, the fabricating technology of the package substrate can hardlykeep up with that of the chips. At present, the smallest pitch betweenthe bumps on a chip is down to about 120 microns. Yet, the pitch betweenbonding pads on a package substrate fabricated with the highestprecision is at most 200 microns. Therefore, the current fabricatingtechnology of the packaging substrate limits the bump pitch on a chip.Furthermore, as the pad pitch continues to reduce, the mismatch of thecoefficient of thermal expansion between the chip and the packagesubstrate often leads to increasing thermal stress and warpage betweenthe two. Ultimately, the reliability of the connection between the chipand the package substrate declines. In addition, the cost of fabricatinga package substrate with fine pad pitch is very high.

SUMMARY OF THE INVENTION

Accordingly, one object of the present invention is to provide a packagesubstrate capable of relaxing the space limit of pitches between bumpson a chip in the fabricating technology of package substrates.

Another object of the present invention is to provide a chip packagestructure having a flexible substrate specification.

Still another object of the present invention is to provide a method offabricating a package substrate capable of relaxing the space limit ofpitches between bumps on a chip in the fabricating technology of packagesubstrates.

To achieve these and other advantages and in accordance with the purposeof the invention, as embodied and broadly described herein, theinvention provides a package substrate for carrying a chip, and the chiphas a plurality of bumps thereon. The package substrate comprises afirst substrate, and an interposer. The first substrate has an openingand at least a first circuit layer disposed on a surface thereof. Theinterposer comprises a second substrate and a second circuit layerformed thereon. The interposer is disposed in the opening of the firstsubstrate, and the second circuit layer has a plurality of bonding padsand traces. Each trace is electrically connected to one of the bondingpads. The bonding pads are used for being connected to the bumps on thechip. The second circuit layer of the interposer is physically andelectrically connected to the first circuit layer of the firstsubstrate. and the second substrate and the first substrate are made ofdifferent materials.

The present invention also provides a chip package structure comprisinga package substrate, and a chip. The package substrate comprises a firstsubstrate and an interposer. The first substrate has an opening and atleast a first circuit layer disposed on a surface thereof. Theinterposer comprises a second substrate and a second circuit layerformed thereon. The interposer is disposed in the opening of the firstsubstrate and the second circuit layer has a plurality of bonding padsand traces. Each trace is electrically connected to one of the bondingpads. The second circuit layer of the interposer is physically andelectrically connected to the first circuit layer of the firstsubstrate, and the second substrate and the first substrate are made ofdifferent materials. The chip is disposed on the interposer. The chiphas a plurality of bumps connected to corresponding bonding pads on theinterposer.

According to an embodiment of the present invention, at least one of thetraces is disposed in the gap between two neighboring bonding pads.

According to an embodiment of the present invention, the first substratefurther has a third substrate having a first circuit layer thereon and adielectric layer disposed on the third substrate in the periphery of theinterposer, and the first circuit layer is disposed on the dielectriclayer.

According to an embodiment of the present invention, the dielectriclayer further comprises a plurality of conductive vias such that thethird circuit layer are electrically connected with the first circuitlayer of the first substrate through the conductive vias.

According to an embodiment of the present invention, the chip packagesubstrate further comprises an adhesion layer disposed between thesecond substrate of the interposer and the third substrate.

According to an embodiment of the present invention, the first substrateis a single-layer circuit board or a multi-layer circuit board.

According to an embodiment of the present invention, the interposerfurther comprises a passivation layer that covers the traces and thesecond substrate but exposes the bonding pads.

According to an embodiment of the present invention, the secondsubstrate may be fabricated using silicon, glass, ceramics or polyimide.

According to an embodiment of the present invention, the chip packagefurther comprises a solder mask layer that covers the third circuitlayer and the dielectric layer but exposes the interposer.

According to an embodiment of the present invention, the interposer hasa thickness between about 1 to 2 mil.

The present invention also provides a method of fabricating a chipsubstrate for carrying a chip with a plurality of bumps thereon. Themethod comprises the following steps. First, a first substrate and asecond substrate are provided. The first substrate has at least a firstcircuit layer disposed on a surface thereof. Thereafter, a secondcircuit layer is formed on the second substrate so that the secondcircuit layer and the second substrate together constitute aninterposer. The second circuit layer further comprises a plurality ofpads and traces. Each trace is electrically connected to one of thebonding pads. Furthermore, the bonding pads are disposed in locationscorresponding to the bumps on the chip. The interposer is disposed onthe first substrate. After that, at least a dielectric layer is formedon the first substrate. The dielectric layer exposes the interposer.Then, a third circuit layer is formed over a portion of the dielectriclayer. The third circuit layer is electrically connected with the secondcircuit layer of the interposer and the first circuit layer of the firstsubstrate.

According to an embodiment of the present invention, the method offabricating the package substrate further comprises forming a soldermask layer that covers the third circuit layer and the dielectric layerbut exposes the interposer.

According to an embodiment of the present invention, at least one of thetraces is disposed in the gap between two neighboring bonding pads.

According to an embodiment of the present invention, the method offorming the second circuit layer on the second substrate comprisesdepositing a metallic layer over the second substrate and thenperforming a photolithographic and an etching process to form the secondcircuit layer.

According to an embodiment of the present invention, the method offorming the dielectric layer and the third circuit layer comprisesperforming a build up process.

Accordingly, since the package substrate of the present inventionutilizes an interposer for electrically connecting a first substrate anda chip together, the pitch of bumps on the chip is unaffected by thespace limitation of the fabricating technology of the first substrate.Furthermore, because the package substrate connects with the chipthrough the interposer, and the interposer and the chip have similarthermal expansion coefficient, the flip chip device deploying thepackage substrate of the present invention have better bondingreliability. In addition, the interposer increases the heat-dissipatingarea of the chip. Hence, a flip chip device deploying the packagesubstrate of the present invention can have a better thermalperformance. Moreover, by modifying the circuit layout on theinterposer, chips having different circuit layout can still use thepackage substrate of the present invention. Also, the chip location canbe changed through a relocation of the interposer.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1A is a schematic cross-sectional view showing the structure of apackage substrate according to a first embodiment of the presentinvention.

FIG. 1B is a top view of the package substrate according to the firstembodiment of the present invention.

FIG. 2A is a schematic cross-sectional view showing the structure of aninterposer according to the first embodiment of the present invention.

FIG. 2B is a top view of the interposer according to the firstembodiment of the present invention.

FIG. 2C is a schematic cross-sectional view of the interposer accordingto the first embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view showing the structure of apackage structure according to a second embodiment of the presentinvention.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are used in thedrawings and the description to refer to the same or like parts.

First Embodiment

FIG. 1A is a schematic cross-sectional view showing the structure of apackage substrate according to a first embodiment of the presentinvention. FIG. 1B is a top view of the package substrate according tothe first embodiment of the present invention. As shown in FIGS. 1A and1B, the package substrate 100 is designed to accommodate a chip 210having a plurality of bumps 212 thereon. The package substrate 100comprises a first substrate 110, an interposer 120, at least adielectric layer 130 and at least a third circuit layer 140. The firstsubstrate 110 has at least a first circuit layer 112 disposed on asurface thereof. In the present embodiment, the first substrate 110doesn't be limited to a single-layer circuit board. The first substrate110 may be a multi-layer circuit board.

The interposer 120 is disposed on the first substrate 110. Theinterposer 120 comprises a second substrate 122 and a second circuitlayer 124. The second substrate 122 is disposed on the first substrate110, and the second circuit layer 124 is disposed on the secondsubstrate 122. Furthermore, the second circuit layer 124 has a pluralityof bonding pads 124 a and a plurality of traces 124 b (as shown in FIG.1B). Each trace 124 b is electrically connected to one of the bondingpads 124 a. The bonding pads 124 a are disposed in locationscorresponding to the bumps 212. Because the traces 124 b extend to theedge of the second substrate 122, the bonding pads 124 a can extend tothe edge of the second substrate 122 through the traces 124 b. Inaddition, the gap between two neighboring bonding pads 124 a has atleast a trace 124 b passing through.

The dielectric layer 130 is disposed on the first substrate 110 in theperiphery of the interposer 120. The dielectric layer 130 is alsoconnected with the interposer 120. In addition, the dielectric layer 130further comprises a plurality of conductive vias 132. The conductivevias 132 are electrically connected to the first circuit layer 112 ofthe first substrate 110. The third circuit layer 140 is disposed on aportion of the dielectric layer 130. The third circuit layer 140 iselectrically connected to the second circuit layer 124 of the interposer120 and the first circuit layer 112 of the first substrate 110 throughthe conductive vias 132. The second circuit layer 124 is fabricatedusing gold, copper or other conductive materials. It should be notedthat the chip 210 is disposed on the interposer 120, the bumps 212 onthe chip 210 are electrically connected to corresponding bonding pads124 a and the third circuit layer 140 is electrically connected to thesecond circuit layer 124. Therefore, electrical signals from the chip210 can be transmitted to the first circuit layer 112 of the firstsubstrate 110 via the bumps 212, the bonding pads 124 a, the traces 124b, the third circuit layer 140 and the conductive plugs 132. Moreover,the interposer has a thickness between about 1 to 2 mils so that thethickness of the first substrate 110 is close to the thickness of thepackage substrate 100. The structure of the interposer 120 is explainedin more detail in the following.

FIG. 2A is a schematic cross-sectional view showing the structure of aninterposer according to the first embodiment of the present invention.FIG. 2B is a top view of the interposer according to the firstembodiment of the present invention. As shown in FIGS. 2A and 2B, theinterposer 120 mainly comprises a second substrate 122 and a secondcircuit layer 124. The second substrate 122 is fabricated using silicon,glass, ceramics, polyimide or other materials having a coefficient ofthermal expansion (CTE) between that of the chip 210 and the firstsubstrate 110. It should be noted that the circuit layout of the bondingpads 124 a and the traces 124 b is not restricted to the one shown inFIG. 2B. In fact, the circuit layout can be designed according to theactual requirements.

FIG. 2C is a schematic cross-sectional view of the interposer accordingto the first embodiment of the present invention. To protect the traces124 b of the second circuit layer 124, a passivation layer 126 is formedover the interposer 120 to cover the traces 124 b and the secondsubstrate 122 but exposes the bonding pads 124 a. The passivation layer126 protects the traces 124 b by minimizing the environmental impact(such as moisture or dust) on the traces 124 b. However, a passivationlayer over the interposer 120 is non-essential in the present invention.

Since the chip 210 is electrically connected to the first circuit layer112 of the first substrate 110 through the interposer 120, the precisionin the fabricating process of the first substrate 110 is not constrainedby the bump pitch of the chip 210. In other words, a circuit boardhaving a lower fabricating precision can be used as the first substrate110. Thus, the fabrication process is much simplified and the cost ofproducing the chip package substrate is greatly reduced. Furthermore, alow-precision first substrate 110 equipped with high-precisioninterposer 120 in partial area is enough to carry a fine pitch chip 210.That means a fine pitch chip 210 no longer requires a costly, fine pitchsubstrate. Furthermore, the circuit layout inside the interposer 120 canbe easily modified to match different types of chips 210 so that therange of applications of the package substrate 100 can be increased.

The interposer 120 has a coefficient of thermal expansion (CTE) betweenthat of the chip 210 and the first substrate 110. Therefore, theinterposer 120 can minimize the stress and warpage due to a mismatch inthe coefficient of thermal expansion (CTE) between the chip 210 and thefirst substrate 110. Consequently, the package substrate 100 of thepresent invention can provide the flip chip device with greaterreliability. Another advantage of the package substrate 100 is that thechip 210 can increase its heat-dissipating area through the interposer120. Ultimately, a flip chip device deploying the package substrate 100of the present invention can have a higher thermal performance. Thefabricating method of the package substrate 100 is discussed in thefollowing.

Referred to FIGS. 2A and 2B, the process of fabricating a packagesubstrate 100 comprises the following steps. First, an interposer 120 isformed. The steps for forming the interposer 120 include providing asecond substrate 122 and then forming a conductive layer (not shown)over the second substrate 122. The conductive layer is made of gold,copper or other conductive materials formed, for example, by performingan evaporation process, a sputtering process or other electroplatingprocess. Thereafter, the conductive layer is patterned to form a secondcircuit layer 124 over the second substrate 122. The patterning processincludes performing a photolithographic process followed by an etchingprocess, for example.

As shown in FIGS. 1A and 1B, a substrate 110 is provided. An interposer120 is disposed on the substrate 110. Thereafter, a dielectric layer 130is formed on the first substrate 110. The dielectric layer 130 exposesthe interposer 120. A photolithographic and etching process is carriedout on the dielectric layer 130 to form a plurality of via holes (notshown). After that, a metallic layer (not shown) is formed on a portionof the dielectric layer 130. The metallic layer fills the vias to formconductive vias 132. Then, another photolithographic and etching processis carried out on the metallic layer to form a third circuit layer 140.In addition, the method of forming the dielectric layer 130 and thethird circuit layer 140 may be a build-up process. It should be notedthat the present also includes other methods of electrically connectingthe third circuit layer 140 with the first circuit layer 112 of thefirst substrate 110 other than the conductive vias 132.

Second Embodiment

FIG. 3 is a schematic cross-sectional view showing the structure of apackage structure according to a second embodiment of the presentinvention. In the second embodiment, the components same as those in thefirst embodiment are labeled with identical marks without furtherdescription.

The package substrate 100 as shown in FIG. 3 further comprises a soldermask layer 150 and an adhesion layer 160. The solder mask layer 150covers the third circuit layer 140 and the dielectric layer 130 butexposes the interposer 120. The adhesion layer 160 is disposed betweenthe interposer 120 and the first substrate 110. The interposer 120 isadhered to the first substrate 110 through an adhesion layer 160.Furthermore, the interposer 120 and the first substrate 110 can beconnected together using other method beside the adhesion layer 160. Inaddition, there is no restriction on the method of electricallyconnecting the chip 210 to the interposer 120. Beside bumps 212, thechip 210 can be electrically connected to the interposer 120 throughanisotropic conductive paste (ACP), anisotropic conductive film (ACF) orother similar material.

However, the dielectric layer 130 and first substrate 110 describedabove can be integrated to a single substrate, and the single substratehas an opening for receiving the interposer 120.

In summary, the chip package structure, package substrate andmanufacturing method thereof of the present invention have at least thefollowing advantages:

-   -   1. The package substrate of the present invention uses an        interposer fabricated using a technique similar to the chip.        Since the pitch of bumps on the chip is no longer affected by        the actual fabricating technology of the circuit board, the chip        can have higher bump density.    -   2. The chip and the interposer have very similar coefficient of        thermal expansion so that stress between the chip and the        interposer is reduced. Therefore, the warpage of the package        substrate inside a flip chip device is minimized and the        reliability of connection between the chip and the interposer is        improved.    -   3. The interposer provides an additional pathway for dissipating        heat away from the chip. Thus, the chip package and the package        substrate of the present invention have better thermal        performance.    -   4. The chip package substrate and fabricating method thereof of        the present invention has a wide range of applications because        the circuit layout of the interposer can be readily modified to        correspond with any type of chip.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

1. A method of fabricating a package substrate for carrying a chiphaving a plurality of bumps thereon, the method comprising: providing afirst substrate and a second substrate, wherein the first substrate hasat least a first circuit layer disposed on a surface thereof; forming asecond circuit layer on the second substrate such that the secondcircuit layer and the second substrate form an interposer, wherein thesecond circuit layer comprises a plurality of bonding pads and aplurality of traces such that each trace is electrically connected toone of the bonding pads and the bonding pads are disposed in locationscorresponding to the bumps on the chip; disposing the interposer on thefirst substrate; after disposing the interposer, forming at least adielectric layer over the first substrate and in a periphery of theinterposer; and forming a third circuit layer over a portion of thedielectric layer such that the third circuit layer is electricallyconnected to the second circuit layer of the interposer and the firstcircuit layer of the first substrate.
 2. The method of claim 1, whereinthe process of disposing the interposer on the first substrate comprisesperforming an adhesion process.
 3. The method of claim 1, wherein beforedisposing the interposer on the first substrate, the method furthercomprises forming a passivation layer over the second substrate and thetraces but exposes the bonding pads.
 4. The method of claim 1, whereinthe process further comprises forming a plurality of conductive vias inthe dielectric layer such that the third circuit layer is electricallyconnected to the first circuit layer of the first substrate through theconductive vias.
 5. The method of claim 1, wherein the process furthercomprises forming a solder mask layer over the third circuit layer andthe dielectric layer but exposes the interposer.
 6. The method of claim1, wherein the process of forming the second circuit layer on the secondsubstrate comprises depositing a metallic layer over the secondsubstrate and performing a photolithographic and etching process on themetallic layer.
 7. The method of claim 1, wherein at least one of thetraces is disposed between two neighboring bonding pads.
 8. The methodof claim 1, wherein the process of fabricating the dielectric layer andthe third circuit layer comprises performing a build-up process.
 9. Themethod of claim 1, wherein the dielectric layer contacts a peripheralsidewall of the interposer.